| 1. | Technical specifications for the model of reaction chamber for sulphuric aid production
硫酸接触室模型技术条件 |
| 2. | Reaction chamber reactor
反应室反应器 |
| 3. | A further family of fibre optic chemical sensors has either surface atached molecular recognition sites or a reaction chamber for achieving specific molecular detection
光纤化学传感器还具有表面分子识别位点或化学反应部位，可用于特定分子的检测。 |
| 4. | So they mixed methane and carbon dioxide ? a major constituent of the earth ' s primordial atmosphere ? in a reaction chamber and exposed it to simulated sunlight
于是他们就将甲烷和二氧化碳（这是早期地球大气最主要的成分）的混合气体放到一个反应室内，然后暴露在模拟的阳光中。 |
| 5. | The research introduced a domestic microwave plasma chemical vapor deposition ( mpcvd ) equipment with a quartz glass window and watercooled stainless steel reaction chamber in 2450mhz / 5 kw
详细介绍了自行研制的2450mhz 5kw带有石英玻璃窗、水冷却不锈钢腔体微波等离子体化学气相沉积( mpcvd )装置。 |
| 6. | The research introduced a domestic microwave plasma chemical vapor deposition ( mpcvd ) equipment with a quartz glass window and water - cooled stainless steel reaction chamber in 2450mhz / 5 kw
本文详细介绍了自行研制的2450mhz 5kw带有石英玻璃窗、水冷却不锈钢腔体微波等离子体化学气相沉积( mpcvd )装置。 |
| 7. | This paper mainly study on the technics of preparing nano - si3n4 and icpecvd . seeking for the proper parameter and technics , crystallization of nano - si3n4 powder with muffle furnace , probe the new effective way of improving the properties of nano - si3n4 powder the ion density in the reaction chamber was diagnosed by a langmuir probe . the rules were obtained under different air pressure , different radio frequency power and different position which the ion density changes about from 1010cm - 3 to 1010cm - 3 decreasing as the pressure increases and increasing as the power decreases
利用朗缪尔探针诊断了反应室内等离子体参数，得到不同位置、不同功率和不同气压下等离子体密度的变化规律，结果表明离子密度为10 ~ 8 10 ~ ( 10 ) cm ~ ( - 3 ) ，等离子体密度随着功率的增大而增大，随着气压的升高而减小，由于离子鞘层的存在，在一定条件下提供了局部等离子体密度稳定的区域。 |
| 8. | The gas sources that we used are trimethylgallium ( tmg ) and 99 . 9999 % purity nitrogen , which were fed into reaction chamber and resonance cavity respectively . the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field . consequently , gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream
实验采用有机金属三甲基镓气源( tmg )和99 . 9999纯度的氮气，在ecr - pecvd150装置共振腔内电子回旋共振吸收微波能量产生的高密度ecr等离子体在磁场梯度和等离子体密度梯度的作用下向下级反应室扩散，在放置于下游区样品台上的- al _ 2o _ 3衬底表面附近发生物理化学反应沉积成gan薄膜。 |
